4-(三甲基硅烷基)苯甲腈合成路线 （共 9 条）
反应条件
N,N,N',N',N'',N''-hexamethylphosphoric triamide; tetrakis(triphenylphosphine) palladium(0) T=160°C; 96 h;
参考文献
Babin, P.; Bennetau, B.; Theurig, M.; Dunogues, J.
Journal of Organometallic Chemistry, 1993 , vol. 446, # 1.2 p. 135 - 138
反应条件
n-butyllithium in tetrahydrofuran Ambient temperature;
参考文献
Raddo, Pasquale Di; Diksic, Mirko; Jolly, Dean
Journal of the Chemical Society, Chemical Communications, 1984 , # 3 p. 159 - 160
反应条件
water; tris-(dibenzylideneacetone)dipalladium(0) in N,N-dimethyl-formamide T=100°C; 24 h;
参考文献
McNeill, Eric; Barder, Timothy E.; Buchwald, Stephen L.
Organic Letters, 2007 , vol. 9, # 19 p. 3785 - 3788
反应条件
[RhCl(η2:η2-cycloocta-1,5-diene)]2 in 2-cyclohexylethanol T=130°C; 15 h; Inert atmosphere;
参考文献
Tobisu, Mamoru; Kita, Yusuke; Ano, Yusuke; Chatani, Naoto
Journal of the American Chemical Society, 2008 , vol. 130, # 47 p. 15982 - 15989
反应条件
in N,N-dimethyl-formamide 5 h; Heating;
参考文献
Walree, Cornelis A. van; Lauteslager, Xavier Y.; Wageningen, Andreas M. A. van; Zwikker, Jan W.; Jenneskens, Leonardus W.
Journal of Organometallic Chemistry, 1995 , vol. 496, # 1 p. 117 - 126
反应条件
1: 78 percent / diethyl ether / Ambient temperature 2: 58 percent / dimethylformamide / 5 h / Heating View Scheme
参考文献
Walree, Cornelis A. van; Lauteslager, Xavier Y.; Wageningen, Andreas M. A. van; Zwikker, Jan W.; Jenneskens, Leonardus W.
Journal of Organometallic Chemistry, 1995 , vol. 496, # 1 p. 117 - 126
反应条件
in acetonitrile 5 h; Irradiation;
参考文献
Kyushin, Soichiro; Ehara, Yasushi; Nakadaira, Yasuhiro; Ohashi, Mamoru
Journal of the Chemical Society, Chemical Communications, 1989 , # 5 p. 279 - 280
反应条件
in acetonitrile 1 h; Irradiation;
参考文献
Kyushin, Soichiro; Ehara, Yasushi; Nakadaira, Yasuhiro; Ohashi, Mamoru
Journal of the Chemical Society, Chemical Communications, 1989 , # 5 p. 279 - 280
反应条件
1: With diisobutylaluminium hydride in toluene T=45°C; 2 h; 2: With water; ammonium chloride in toluene T=20°C; 1 h;
参考文献
Sumitomo Chemical Company, Limited
Patent: EP1640360 A1, 2006 ;
Location in patent: Page/Page column 85 ;
