carbon in neat (no solvent) mixture of SiO2 with active carbon pwd. ball-milled for 20 h, pressed to pellets, calcined at 1450 °C in wlowing nitrogen atmosphere for2 h; wool-like products depositing on surfase of pellets collected; X-ray powdwer diffraction;
参考文献
Solid State Communications, , vol. 115, # 12 p. 683 - 686
in gaseous matrix a bubbler used with H2 carrier (with flow of 3 l/min) to introduce neopentasilane to chamber, bubbler temp. 35 °C, chamber pressure 6 torr, growth temp. 600, 650, 700 °C;
in gaseous matrix microcristalline film formation on SiO2 substrate by remote rf H2-plasmaenhanced chemival vapor deposition from Si2H6/SiF4 (plasma power 60 W, flow rate 0-30 ml/s, 430°C); TEM, AFM;
