in gas reactor temp.: 250 - 500°C; detn. by gas chromy.;
参考文献
Mulla, I. S.; Choube, A. C.; Dongare, M. K.; Sinha, A. P. B.
Indian Journal of Chemistry, Section A: Inorganic, Physical, Theoretical & Analytical, 1988 , vol. 27, # 9 p. 756 - 758
in neat (no solvent) heating of black SiS2 with Si as impurities in a dry HCl stream at 290-300 °C;;
参考文献
Cambi, L.
Atti della Accademia Nazionale dei Lincei, Classe di Scienze Fisiche, Matematiche e Naturali, Rendiconti, 1911 , vol. 20, # I p. 433 - 440
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Gmelin Handbook: Si: MVol.B, 280, page 751 - 754
H2S in neat (no solvent) Irradiation (UV/VIS); (Ar); H2S was passed over heated Si at about 1500 K, formed SiS and a mixt. of COS and Ar (200:1) was cocondensed about 30 min on a helium-cooled Cu surface and photolysed with a medium pressure Hg lamp (H2O filter); not isolated, detected IR spect.;
参考文献
Schnoeckel, Hansgeorg; Koeppe, Ralf
Journal of the American Chemical Society, 1989 , vol. 111, # 13 p. 4583 - 4586
copper in neat (no solvent) passing CF2ClCFCl2 (4 mol, 0.18 - 0.20 mol/h) over a stirred mixture of Si and Cu (1:1 or 3:1) at 200-350°C or 200-400°C;; highest yield at 250-300°C;;
aluminum triiodide in neat (no solvent) reaction at 80°C and 500 Torr;; fractional distillation and condensation;;
参考文献
Emeleus, H. J.; Maddock, A. G.; Reid, C.
Journal of the Chemical Society, 1941 , p. 353 - 358
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Gmelin Handbook: Si: MVol.B, 274, page 739 - 741
