in gaseous matrix byproducts: N2; silicon evaporated at temp. between 1600-2100°C, Si vapor directly reacted with N2O in the pressure range E-5 to E-3 Torr (single and multiple collision condns.); not isolated, identified by chemiluminescence;
参考文献
Gole, James L.; Green, Gary J.
Chemical Physics, 1985 , vol. 100, p. 133 - 152
in gaseous matrix byproducts: NO; silicon evaporated at temp. between 1600-2050°C, Si vapor directly reacted with NO2 in the pressure range E-5 to E-3 Torr (single and multiple collision condns.); not isolated, identified by chemiluminescence;
参考文献
Woodward, R.; Hayden, J. S.; Gole, J. L.
Chemical Physics, 1985 , vol. 100, p. 153 - 170
in gaseous matrix byproducts: HCl; diluting gas mixt. in Pyrex reaction cell (20 Torr), photolysis at 193 nm, CCl4/SiH4/O2=3/10/1 m Torr, total pressure 30 Torr, delay time between photolysis ArF and probe dye lasers 500 μs;
参考文献
Murakami; Koshi; Matsui; Kamiya; Umeyama
Journal of Physical Chemistry, 1996 , vol. 100, # 44 p. 17501 - 17506
investigation of reaction of NO with Si(111) and (100) surfaces between1220-1390°C and for NO-pressures of 6E-6 to 2E-4Torr: formation of SiO and N2 at high substrate temp. and low NO pressure;; optical and scanning electron microscopy;;
参考文献
He, Da-Ren; Smith, F. W.
Surface Science, 1985 , vol. 154, p. 347 - 356
