copper in neat (no solvent) Si-Cu (8:2), C2H5Br and H2 at 290-300°C;;
参考文献
Kumada, M.
J. Inst. Polytechn. Osaka Univ. C, 1952 , vol. 2, p. 131 - 138
C. A., 1954 , p. 11303
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Gmelin Handbook: Si: MVol.C, 62, page 175 - 177
in gas Kinetics; byproducts: O, OH, H; after laser photolysis of silane in a Pyrex flow cell; He was used as buffer gas; T = 293 K; total pressure 5 Torr; not isolated; detected by electron impact mass spectrometry;
参考文献
Journal of Physical Chemistry, , vol. 95, # 24 p. 9869 - 9873
copper in neat (no solvent) Si-Cu (8:2), C2H5Br and H2 at 290-300°C;;
参考文献
Kumada, M.
J. Inst. Polytechn. Osaka Univ. C, 1952 , vol. 2, p. 131 - 138
C. A., 1954 , p. 11303
Full Text Show Details
Gmelin Handbook: Si: MVol.C, 62, page 175 - 177
→
反应条件
at 1200 °C in vac.; 98.5percent Ba;
参考文献
White, A. H.
Journal of Applied Physics, 1949 , vol. 20, p. 856 - 860
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Gmelin Handbook: Ba: SVol., 64, page 284 - 286
in neat (no solvent) formation on heating to 400°C with Si in a closed tube; further products;;
参考文献
Barthes, D.; Chaigneau, M.; Malangeau, P.
Comptes Rendus des Seances de l'Academie des Sciences, Serie C: Sciences Chimiques, 1968 , vol. 266, p. 1780 - 1783
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Gmelin Handbook: C: MVol.D2, 4.3.2.5.6, page 371 - 372
