Fmoc-L-天门冬氨酸4-叔丁酯合成路线 （共 32 条）
反应条件
1: L-aspartic acid β-t-butyl ester With N,N-dicyclohexylamine in acetone T=20°C; 2: 1-[[(9H-fluoren-9-ylmethoxy)carbonyl]oxy]-2,5-pyrrolidinedione With sodium carbonate in water; acetonitrile T=0 - 20°C; pH=8; 3: With potassium hydrogensulfate in water; acetonitrile pH=2 - 3;
参考文献
Nowshuddin, Shaik; Rao; Reddy, A. Ram
Synthetic Communications, 2009 , vol. 39, # 11 p. 2022 - 2031
反应条件
sodium hydrogencarbonate in water; acetone Ambient temperature;
参考文献
Schoen, Istvan; Kisfaludy, Lajos
Synthesis, 1986 , # 4 p. 303 - 305
反应条件
tertiary amine in 1,4-dioxane; water 3 h;
参考文献
Henklein, Peter; Heyne, Hans-Ulrich; Halatsch, Wolf-Rainer; Niedrich, Hartmut
Synthesis, 1987 , # 2 p. 166 - 167
反应条件
triethylamine in water; acetonitrile 1 h;
参考文献
Echner, Hartmut; Voelter, Wolfgang
Liebigs Annalen der Chemie, 1988 , p. 1095 - 1098
反应条件
N-ethyl-N,N-diisopropylamine in tetrahydrofuran T=20°C; 2 h;
参考文献
Journal of Organic Chemistry, , vol. 77, # 23 p. 10575 - 10582
反应条件
1: 1.) NaOH / 1.) MeOH; 2.) benzene, 10-15 deg C, 2 h 2: pyridine / 1.) room temp., 1 h; 2.) 35 deg C, 3 h 3: 64 percent / tertiary amine / H2O; dioxane / 3 h View Scheme
参考文献
Synthesis, , # 2 p. 166 - 167
反应条件
1: pyridine / 1.) room temp., 1 h; 2.) 35 deg C, 3 h 2: 64 percent / tertiary amine / H2O; dioxane / 3 h View Scheme
参考文献
Synthesis, , # 2 p. 166 - 167
反应条件
sodium carbonate; toluene-4-sulfonic acid 1) dioxane, gas pressure: 350 mbar, 3 d, r.t., 2) dioxane, 0 deg C to r.t., 14 h; Yield given. Multistep reaction. Yields of byproduct given;
参考文献
Synthesis, , # 7 p. 571 - 572
反应条件
trifluoroacetic acid in dichloromethane 2 h; Ambient temperatureselective cleavage of the C-terminal protecting groups in peptides;
参考文献
Tetrahedron Letters, , vol. 34, # 2 p. 323 - 326
反应条件
4-methyl-morpholine; benzotriazol-1-yloxyl-tris-(pyrrolidino)-phosphonium hexafluorophosphate in N,N-dimethyl-formamide Automated synthesizer;
参考文献
Kaohsiung Medical University; Chen, Hui-Ting; Chang, Hsin-Fang; Wang, Yan-Hsiung; Kao, Chai-Lin
Patent: US8614194 B1, 2013 ;
Location in patent: Page/Page column 5 ;
