反应条件
in neat (no solvent)
Kinetics; byproducts: CF4, CF3OF; etching of quartz plate or SiO2 film with COF2 diluted with N2, pressure150, 250 or 350 Pa; detd. by IR;
参考文献
Mitsui, Yuki; Ohira, Yutaka; Yonemura, Taisuke; Takaichi, Tsuyoshi; Sekiya, Akira; Beppu, Tatsuro
Journal of the Electrochemical Society, 2004 , vol. 151, # 5 p. G297-G301