(S)-(-)-1,1-二苯基-2-丙胺合成路线 (共 11 条)
反应条件
trifluorormethanesulfonic acid T=25°C; Inert atmosphere; Mechanism;
参考文献
Nilsson Lill, Sten O.; Naredla, Rajasekhar Reddy; Zielinski, Matthew E.; Knoecer, Larecia; Klumpp, Douglas A.
Journal of Organic Chemistry, 2013 , vol. 78, # 17 p. 8922 - 8926
反应条件
(i) NH2OH, (ii) H2, Raney-Ni, aq. NaOH, EtOH; Multistep reaction;
参考文献
Christol,H. et al.
Bulletin de la Societe Chimique de France, 1963 , p. 877 - 881
反应条件
methanol; nickel Hydrogenation;
参考文献
Hass et al.
Industrial and Engineering Chemistry, 1951 , vol. 43, p. 2875,2876
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Hodge et al.
Journal of the American Pharmaceutical Association (1912-1977), 1951 , vol. 40, p. 205
反应条件
sulfuric acid; sodium nitrite beim Behandeln des Reaktionsprodukts mit Acetanhydrid und wenig H2SO4 und anschliessend mit LiAlH4 in Aether;
参考文献
Govindachari et al.
Proceedings - Indian Academy of Sciences, Section A, 1958 , vol. 48, p. 111,117
反应条件
para-dicyanobenzene; ammonia in acetonitrile Irradiationphotoinduced nucleophilic addition of other alkylamines; other aryl-substituted alkenes; Mechanism;
参考文献
Yamashita, Toshiaki; Shiomori, Koichiro; Yasuda, Masahide; Kensuke, Shima
Bulletin of the Chemical Society of Japan, 1991 , vol. 64, # 2 p. 366 - 374
反应条件
1: H2SO4 2: Raney nickel; methanol / Hydrogenation View Scheme
参考文献
Hass et al.
Industrial and Engineering Chemistry, 1951 , vol. 43, p. 2875,2876
反应条件
1: H2SO4 2: Raney nickel; methanol / Hydrogenation View Scheme
参考文献
Hass et al.
Industrial and Engineering Chemistry, 1951 , vol. 43, p. 2875,2876
反应条件
aluminium trichloride
参考文献
Klosa,J.
Journal fuer Praktische Chemie (Leipzig), 1966 , vol. 34, p. 335 - 340
参考文献
Hoch
Comptes Rendus Hebdomadaires des Seances de l'Academie des Sciences, 1934 , vol. 198, p. 1865,1866
反应条件
N-isopropylcarbamoyl-derivatized cyclofructan-6 column in methanol; acetic acid; triethylamine; acetonitrile T=20°C; Resolution of racemate;
参考文献
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM; ARMSTRONG, Daniel, W.; PING, Sun; BREITBACH, Zachary, S.; WANG, Chunlei
Patent: WO2010/148191 A2, 2010 ;
Location in patent: Page/Page column 45-50 ;