(2S)-(1-四氢嘧啶-2-酮)-3-甲基丁酸合成路线 （共 12 条）
反应条件
potassium hydroxide; nickel-aluminum alloy; hydrogen in water T=20°C; P=3102.97 Torr;
参考文献
EP1170289 A2, ;
Page 64 ;
反应条件
hydrogenchloride; sodium hydroxide in tetrahydrofuran; ethanol; ethyl acetate
参考文献
Abbott Laboratories
Patent: EP1170289 A2, 2002 ;
Location in patent: Page 62-63 ;
反应条件
lithium hydroxide in tetrahydrofuran T=0°C; 14 h; Stirring;
参考文献
Abbott Laboratories
Patent: EP1170289 A2, 2002 ;
Location in patent: Page 57 ;
反应条件
sodium hydroxide in water Heating / reflux;
参考文献
WO2003/101971 A1, ;
Page 8 ;
反应条件
1: 1-Amino-3-chloro-propane hydrochloride; (2S)-3-Methyl-2-(phenoxycarbonyl)aminobutyric acid With sodium hydroxide in tetrahydrofuran T=1 - 5°C; 2 h; 2: 1-chloro-3-aminopropane 1 h; 3: With potassium tert-butylate in tetrahydrofuran T=20°C; 12 - 16 h;
参考文献
EP1170289 A2, ;
Page 63 ;
反应条件
1: lithium chloride; lithium hydroxide hydrate; aluminum oxide / water / 5 h / -20 - -10 °C / pH 9.5 - 10.2 / |Inert atmosphere 2: sodium hydroxide / tetrahydrofuran / 2 h / 2 - 10 °C / |Inert atmosphere 3: potassium tert-butylate / tetrahydrofuran / 18 h / 20 °C / |Inert atmosphere View Scheme
参考文献
Organic Process Research and Development, , vol. 4, # 4 p. 264 - 269
反应条件
1: sodium hydroxide / tetrahydrofuran / 2 h / 2 - 10 °C / |Inert atmosphere 2: potassium tert-butylate / tetrahydrofuran / 18 h / 20 °C / |Inert atmosphere View Scheme
参考文献
Organic Process Research and Development, , vol. 4, # 4 p. 264 - 269
参考文献
Bioorganic and Medicinal Chemistry Letters, , vol. 14, # 10 p. 2643 - 2645
反应条件
1: SOCl2 / tetrahydrofuran / 6 h / 0 - 20 °C 2: imidazole / dimethylformamide; ethyl acetate / 0 - 20 °C 3: HCO2NH4 / Pd/C / methanol / 50 °C View Scheme
参考文献
Reddy, G. S. Kiran Kumar; Ali, Akbar; Nalam, Madhavi N. L.; Anjum, Saima Ghafoor; Cao, Hong; Nathans, Robin S.; Schiffer, Celia A.; Rana, Tariq M.
Journal of Medicinal Chemistry, 2007 , vol. 50, # 18 p. 4316 - 4328
反应条件
N'-(3-dimethylaminopropyl)-N-ethylcarbodiimide in N,N-dimethyl-formamide
参考文献
Abbott Laboratories
Patent: EP1170289 A2, 2002 ;
Location in patent: Page 42 ;
