in gaseous matrix mixing of SiF4 and H2O with excess fluoride (SiF4 23.8 mbar + H2O 1.3 mbar) directly in the gas line, mixing with argon in ratios of 1/1000; deposited onto aluminum substrate cooled at 12 K; monitoring by IR;

in gaseous matrix mixing of SiF4 and H2O with excess fluoride (SiF4 51.8 mbar + H2O 22.0 mbar) directly in the gas line, mixing with argon in ratios of 1/500; deposited onto aluminum substrate cooled at 12 K; monitoring by IR;

nitrogen(IV) oxide T=20°C; P=2.25023 Torr; Gas phaseIrradiation; KineticsMechanism;