(2-苯基萘-6-基)硼酸合成路线 (共 6 条)
反应条件
1: With n-butyllithium in diethyl ether; hexane; toluene
T=-40 - -5°C; 1 h;
2: With tri-isopropoxy-borane in diethyl ether; hexane; toluene
T=20°C; 4 h;
3: With hydrogenchloride in diethyl ether; hexane; water; toluene
参考文献
IDEMITSU KOSAN CO., LTD.
Patent: WO2006/104044 A1, 2006 ;
Location in patent: Page/Page column 48 ;
反应条件
1: 2-bromo-6-phenyl-naphthalene With n-butyllithium in tetrahydrofuran; hexane
T=-78°C; 2.33333 h; Inert atmosphere;
2: boric acid trimethyl ester in tetrahydrofuran; hexane
T=20°C; 20 h;
3: With hydrogenchloride in tetrahydrofuran; hexane; water
0.5 h;
参考文献
Semiconductor Energy Laboratory Co., Ltd.
Patent: US2011/245495 A1, 2011 ;
Location in patent: Page/Page column 40 ;
反应条件
sodium chloride in hexane; toluene
参考文献
Idemitsu Kosan Co., Ltd.
Patent: US2007/88185 A1, 2007 ;
反应条件
sodium chloride; sodium carbonate; tetrakis(triphenylphosphine) palladium(0) in toluene
参考文献
Idemitsu Kosan Co., Ltd.
Patent: US2007/88185 A1, 2007 ;
反应条件
1.1: n-butyllithium / hexane; tetrahydrofuran / 2.33 h / -78 °C / Inert atmosphere
1.2: 18 h / 20 °C
1.3: 1 h
2.1: potassium carbonate / palladium diacetate; tris-(o-tolyl)phosphine / toluene; ethanol; water / 5 h / 85 °C / Inert atmosphere; Reflux
3.1: n-butyllithium / hexane; tetrahydrofuran / 2.33 h / -78 °C / Inert atmosphere
3.2: 20 h / 20 °C
3.3: 0.5 h
View Scheme
参考文献
Semiconductor Energy Laboratory Co., Ltd.
Patent: US2011/245495 A1, 2011 ;
反应条件
1.1: potassium carbonate / palladium diacetate; tris-(o-tolyl)phosphine / toluene; ethanol; water / 5 h / 85 °C / Inert atmosphere; Reflux
2.1: n-butyllithium / hexane; tetrahydrofuran / 2.33 h / -78 °C / Inert atmosphere
2.2: 20 h / 20 °C
2.3: 0.5 h
View Scheme
参考文献
Semiconductor Energy Laboratory Co., Ltd.
Patent: US2011/245495 A1, 2011 ;