1,1,2-三氯-1,3,3,3-四氟丙烷合成路线 (共 62 条)
反应条件
hydrogen; 5 Pd/C T=225°C; Flow reactor;
参考文献
E. I. du Pont de Nemours and Company; KNAPP, Jeffrey, P.
Patent: WO2011/53449 A1, 2011 ;
Location in patent: Page/Page column 15-16 ;
反应条件
hydrogen; 0.5 Pd/C T=175 - 225°C; Gas phase;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2005/37743 A1, 2005 ;
Location in patent: Page/Page column 16; 19 ;
反应条件
hydrogen; 1 palladium on alumina T=175°C; 0.00833333 h; Flow reactor;
参考文献
E. I. du Pont de Nemours and Company; KNAPP, Jeffrey, P.
Patent: WO2011/53449 A1, 2011 ;
Location in patent: Page/Page column 15 ;
反应条件
hydrogen; 0.5 Pd/C T=150 - 225°C; P=760.051 Torr; 0.00833333 h; Product distribution / selectivity;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/2501 A2, 2008 ;
Location in patent: Page/Page column 15-16 ;
反应条件
hydrogen fluoride; hydrogen T=300°C; P=760.051 Torr; 0.00833333 h; Product distribution / selectivity;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/2501 A2, 2008 ;
Location in patent: Page/Page column 14 ;
反应条件
hydrogen fluoride; hydrogen T=225 - 250°C; P=760.051 Torr; 0.00833333 h; Product distribution / selectivity;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/2501 A2, 2008 ;
Location in patent: Page/Page column 14 ;
反应条件
hydrogen fluoride; hydrogen T=275 - 300°C; P=760.051 Torr; 0.00833333 h; Product distribution / selectivity;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/2501 A2, 2008 ;
Location in patent: Page/Page column 14 ;
反应条件
hydrogen; 5 Pd/C T=150°C; Product distribution / selectivity;
参考文献
E. I. du Pont de Nemours and Company; KNAPP, Jeffrey, P.
Patent: WO2011/53449 A1, 2011 ;
Location in patent: Page/Page column 15-16 ;
反应条件
hydrogen T=175 - 250°C; 0.00833333 h; Product distribution / selectivity;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/2501 A2, 2008 ;
Location in patent: Page/Page column 15 ;
反应条件
hydrogen fluoride; hydrogen T=300°C; P=760.051 Torr; 0.00833333 h; Product distribution / selectivity;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/2501 A2, 2008 ;
Location in patent: Page/Page column 14 ;