in solid matrix byproducts: Ge2H6; Irradiation (UV/VIS); dilg. GeH4 with Ar (various ratios); codeposition with F2 dild. with Ar (various ratios) on a substrate at 13.+-1. K; UV-photolysis (220-1000 nm) for 1 h; annealing to 25.+-.2 K;; not isolated, identified by IR-spectroscopy; further products;;
参考文献
Journal of Physical Chemistry, , vol. 96, # 13 p. 5276 - 5284
in gas low-pressure chemical vapor deposition of GeF4 on SiO2/c-Si wafer, 0.4-100 torr and 300-450°C; the film's composition was detected by X-ray diffraction;
参考文献
Hanna, Jun-Ichi; Shimizu, Kousaku
Journal of Organometallic Chemistry, 2000 , vol. 611, # 1-2 p. 531 - 536
