in neat (no solvent) products of a discharge in D2 passed over elem. sulfur;
参考文献
Davies, P. B.; Handy, B. J.; Murray Lloyd, E. K.; Russel, D. K.
Molecular Physics, 1978 , vol. 36, p. 1005 - 1015
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Gmelin Handbook: S: SVol.4a/b, 4.1.1.1, page 441 - 441
in neat (no solvent) products of a discharge in D2O passed over elem. sulfur;
参考文献
Davies, P. B.; Handy, B. J.; Murray Lloyd, E. K.; Russel, D. K.
Molecular Physics, 1978 , vol. 36, p. 1005 - 1015
Full Text Show Details
Gmelin Handbook: S: SVol.4a/b, 4.1.1.1, page 441 - 441
in gas byproducts: H2S; equimolar amts. of F3SiH and S was reacted in an ampoule at 620 K for 48h; yield of F3SiSH was increased to 6 percent at 620 K during 10 h;; volatiles were trapped at 123 and 77 K, fractionated distn., products were identified by NMR and vapor phase IR;
参考文献
Beckers, Helmut; Buerger, Hans
Zeitschrift fur Anorganische und Allgemeine Chemie, 2001 , vol. 627, # 6 p. 1217 - 1224
in neat (no solvent) dried AgF and S (heating in vac.) are mixed in a sealed glass tube (vac.) and heated;; removal of S (ice cooled vessel); condensation (CO2/ether cooling); distillation; still contaminated;;
参考文献
Trautz, M.; Ehrmann, K.
Journal fuer Praktische Chemie (Leipzig), 1935 , vol. 142, p. 79 - 124
in neat (no solvent) byproducts: silicium fluorides; passing F2 over sulfur in copper tube (atm. of dry nitrogen);; storage over concd. aq. KOH for some time (removal of SF2 and silicium fluorides); fractionate distillation (removal of main product SF6);;
