H2O2 in water Ga was reacted with excessive hydrofluoric acid under N2 flow, heated on water-bath, H2O2 was gradually added; product was vaporized until dry on water-bath, residue was heated at 200°C for 2 h under HF flow; X-ray diffraction;
in neat (no solvent) cylinder fiited with dry powdered element, NF3O condensed into cylinder at -196°C, mixt. heated at 180°C for 16h; not isolated, monitored by NMR, IR;
参考文献
Gupta, O. D.; Kirchmeier, Robert L.; Shreeve, Jean'ne M.
Inorganic Chemistry, 1990 , vol. 29, p. 573 - 574
in solid matrix react. laser-ablated (10-40 mJ 1064 nm laser energy per 10 ns pulse) Ga with F2 in argon or neon matrix at 5 K - other product (F2)GaF2; identified by IR;
参考文献
Wang, Xuefeng; Andrews, Lester
Journal of the American Chemical Society, 2011 , vol. 133, # 11 p. 3768 - 3771
in neat (no solvent, solid phase) byproducts: Ag; oven (cf. Grabandt, de Lange, Mooyman, Chem. Phys. Lett. 160 (1989) 359) filled with a mixt. of gallium metal and AgCl, oven temp. between 700 to 900°C, inner ionization chamber kept at low temp.; not isolated, detected by photoelectron spectra;
