in neat (no solvent) byproducts: Cu; CuCl particles were deposited on a Si wafer by dipping in a slurry of CuCl in hexane; coated wafer was heated at 380°C in a furnace for 1-60 min;; mixt. not sepd.;;
参考文献
Banholzer, W. F.; Lewis, N.; Ward, W.
Journal of Catalysis, 1986 , vol. 101, p. 405 - 415
in neat (no solvent) vivious reaction under formation of Ca and Si2Cl6, which are burning;;
参考文献
Gates, C. B.
Journal of Physical Chemistry, 1911 , vol. 15, p. 97 - 146
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Gmelin Handbook: Ca: MVol.B2, 79, page 447 - 448
in neat (no solvent) formation on heating to 400 and 500°C with Si in a closed tube; further products;;
参考文献
Barthes, D.; Chaigneau, M.; Malangeau, P.
Comptes Rendus des Seances de l'Academie des Sciences, Serie C: Sciences Chimiques, 1968 , vol. 266, p. 1780 - 1783
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Gmelin Handbook: C: MVol.D2, 4.3.2.5.6, page 371 - 372
