chromite (53percent Cr2O3) heated with Si (97.85percent) at 1300°C and 1E-4 Torr;
参考文献
Gel'd, P. V.
Doklady Akademii Nauk SSSR, 1948 , vol. 61, p. 495 - 498
C.A., 1948 , p. 8736
Full Text Show Details
Gmelin Handbook: Cr: MVol.A1, 5.1.1, page 213 - 217
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反应条件
in neat (no solvent) High Pressure; under Ar flow; Si wafer placed on Al plate; Ga droplets (obtained from GaN at 1150°C) transferred by Ar contg. O2 (7.8 Torr partial pressure) and deposited onto Si wafer; heated at 1150°C (400 Torr) for5 h; detd. by scanning and transmission electron microscopy, and energy dispersive X-ray spectroscopy;
参考文献
Journal of the American Chemical Society, , vol. 124, # 8 p. 1817 - 1822
