in neat (no solvent) chlorination of Si in an iron tube electrically heated;; treatment with Hg and Na amalgame; repeated fractional distn.; very pure;;
参考文献
Robinson, P. L.; Smith, H. C.
Journal of the Chemical Society, 1926 , p. 1262 - 1282
carbon in neat (no solvent) SiCl4 as by-product at the synthesis of TiCl4 by chlorination of TiO2 in presence of coal and Si;; isolation by fractional distillation of the chloride mixture;;
参考文献
Gmelin Handbook: Si: MVol.B, 244, page 661 - 663
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Stauffer Chemical Co.
Patent: US2401544 , 1946 ;
C. A., 1946 , p. 5214
in neat (no solvent) byproducts: Cu; CuCl particles were deposited on a Si wafer by dipping in a slurry of CuCl in hexane; coated wafer was heated at 380°C in a furnace for 1-60 min;; mixt. not sepd.;;
参考文献
Banholzer, W. F.; Lewis, N.; Ward, W.
Journal of Catalysis, 1986 , vol. 101, p. 405 - 415
in neat (no solvent) incineration of a mixture with Si and PCl5 by ignition of a special blaster;;
参考文献
Mahn, R.
Jena. Z. Med. Naturwiss., 1870 , vol. 5, p. 158 - 166
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Mahn, R.
Zeitschrift fuer Chemie (Stuttgart, Germany), 1869 , vol. 12, p. 729 - 731
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Gmelin Handbook: P: MVol.C, 192, page 441 - 443
