反应条件
H2 in neat (no solvent) byproducts: HCl, H2; cold wall reactor, dild. mixt. of TiCl4 and SiH4 (1percent in H2, total pressure: 2 Torr), deposition on (001)-Si wafer (patterned in parallel stripes, alternative SiO2 and Si, heated by fast switching lamp, T=800 or 900 °C), deposition time: 1 min; not isolated, detected by Auger electron spectroscopy, Rutherford backscattering profiling;
参考文献
Bensahel, D.; Regolini, J. L.; Mercier, J.
Applied Physics Letters, 1989 , vol. 55, p. 1549 - 1551
