in neat (no solvent) byproducts: HCl, H2; Irradiation (UV/VIS); irradiating SiH2Cl2-C2H4 gas mixt. with CO2 laser at atmospheric pressure (reaction flame temp. from less than 1273 K to more than 3073 K depending on power density and C2H4/SiH2Cl2 ratio); X-ray powder diffraction, transmission electron microscopy;
参考文献
Journal of Materials Science, , vol. 27, p. 6091 - 6097
in neat (no solvent) byproducts: NH4Cl; other Radiation; CO2 laser (110-160 W) chemical vapor prepn., stainless steel reactor; gas mixing in or above laser beam (avoiding low-temp. reactions); carrier gas N2, surrounding gas Ar; Si3N4 sepn. in electrostatic precipitator at 570 K; heating at 770 K for 15 h on removal remaining NH4Cl; IR spectroscopy, X-ray and electron diffraction, elem. anal.;
参考文献
Journal of the American Ceramic Society, , vol. 74, p. 2759 - 2768
in neat (no solvent) using low pressure chemical vapor deposition; tube evacuated, heated to 1000°C; gas contg. SiH4 and N2O diluted in Ar entered, working pressure 10-200 Pa; SiO(x) thin film deposited on Si substrate at 748°C; annealed at 900-1100°C; Si nanocrystals embedded in SiO2 matrix obtained; monitored by Raman andIR absorption spectra and scanning electron microscopy;
参考文献
Journal of Molecular Structure, , vol. 834-836, # SPEC. ISS. p. 461 - 464
