in neat (no solvent) (inert atmosphere, Schlenk technique); educts are heated together at 60°C for 10 min; HN(SiMe3)2 is removed under reduced pressure, residue is recrystd. from warm (50°C) hexane, crystn.;

octadecene in further solvent(s) soln. of Ge(N(SiMe3)2)2 in oleylamine injected in hot (300°C) octadecene, kept at 285°C for 5 min, allowed to cool to room temp., toluene or CHCl3 added, extd. twice with MeOH, excess acetone to ppt.; ppt. septd. by centrifugation;

in benzene Ar-atmosphere; refluxing (36 h); evapn. (vac.), recrystn. (hexane); elem. anal.;

1: hexane 2: benzene; hexane View Scheme

in diethyl ether byproducts: LiCl; dry Ar-atmosphere; addn. of Li-reagent (from (Me3Si)2CH2Cl and Li by refluxing for 24 h and filtration) to equimolar amt. of Ge-amide (from GeCl2 and Li-amide) at 0°C, addn. of equimolar amt. SnCl2, stirring (room temp., 1 h), standing overnight; sepn. of supernatant, evapn. (0°C, 0.01 Torr), extn. of Sn-amide (pentane), extn. into hexane, crystn. (-30°C); sublimable (110°C, 0.001 Torr); elem. anal.;