in hexane byproducts: LiCl3; freshly sublimed GaCl3 in n-hexane treated with soln. of tert-butyllithium in hexane over period of 1 h; mixt. heated under reflux for 16 h; cooled (room temp.); filtered; volatile components were removed in vac. (room temp.); Ga(CMe3)3 distilled in trap cooled with liquid N2 (room temp., E1-3 Torr); residue dissolved in pentane, filtered; evapd.; recrystd. (n-pentane or diisopropyl ether);

in pentane; benzene molar ratio t-BuLi:GaCl3=3:1 (0°C, then 65°C, 15 h); cooling to room temp., filtration, solvent removal (Ar-atmosphere), distn. (69-73°C, 4 torr);

C6H5CCC(CH3)3 in hexane (Ar); heating at reflux mixt. of gallium compd. and acetylene deriv. for15 h; detected by NMR among other products;

in toluene byproducts: (t-Bu)8Al7GaO8, (t-Bu)8Al6Ga2O8; under N2; the Al-compd. in toluene is added to a cold (-78°C) soln. of the Ga-complex in toluene; mixt. refluxed overnight; soln. concd., cooled (mixt. of Ga(tBu)3 and ((tBu)2Al(OAl(tBu)2))2 obtained); evapn. of all volatiles; recrystn. (toluene) gave crystals of ((tBu)2Al(OAl(tBu)2))2 and ((tBu)Al(O))8 (contaminated with (tBu)8Al7Ga(O)8and (tBu)8Al6Ga2(O)8 by MS);

in benzene-d6 75-80°C;;

in hexane (Ar); soln. of Ga compd. and alkyne in hexane was treated with amine at room temp.; stirred under reflux for 16 h; cooled to room temp.; decanted; washed (hexane); crystd. (cyclopentane);elem. anal.;

in hexane under Ar; soln. of (t-Bu)2GaH in n-hexane added to soln. of C6H3(C2CMe3)3 in n-hexane at room temp.; heated under reflux for 16 h; filtered; filtrate concd. under vac. at room temp.; ppt. collected; recrystd.;

in neat (no solvent) molar ratio t-Bu3Ga:GaCl3=2:1 (static vac., 120°C, 2 h); sublimation (95°C, 0.001 torr);

in pentane (N2 or Ar); react., stirring (1 h, pptn.), solvent evapn.; recrystn. (CH2Cl2);