2,5-二溴-3,4-二硝基噻吩合成路线 (共 11 条)
反应条件
sulfuric acid; nitric acid 3 h;
参考文献
Li, Qing; Li, Jiuyan; Yang, Ruixia; Deng, Lijun; Gao, Zhanxian; Liu, Di
Dyes and Pigments, 2012 , vol. 92, # 1 p. 674 - 680
反应条件
sulfuric acid; bromine; nitric acid Yield given. Multistep reaction;
参考文献
Zhang, Qing T.; Tour, James M.
Journal of the American Chemical Society, 1998 , vol. 120, # 22 p. 5355 - 5360
反应条件
sulfuric acid; nitric acid
参考文献
Rosenberg
Chemische Berichte, 1885 , vol. 18, p. 3030
反应条件
sulfuric acid; nitric acid
参考文献
Steinkopf et al.
Justus Liebigs Annalen der Chemie, 1934 , vol. 512, p. 136,156
反应条件
tetrakis(triphenylphosphine) palladium(0) in toluene Stille Cross Coupling; 20 h; Inert atmosphere;
参考文献
Xiao, Zuo; Ye, Gang; Liu, Ying; Chen, Shan; Peng, Qian; Zuo, Qiqun; Ding, Liming
Angewandte Chemie - International Edition, 2012 , vol. 51, # 36 p. 9038 - 9041
反应条件
tetrakis(triphenylphosphine) palladium(0); potassium carbonate in ethylene glycol dimethyl ether; water T=100°C; Suzuki-Miyaura cross-coupling; 8 h; Inert atmosphere;
参考文献
Cheng, Haojin; Djukic, Brandon; Jenkins, Hilary; Gorelsky, Serge; Lemaire, Martin
Canadian Journal of Chemistry, 2010 , vol. 88, # 9 p. 954 - 963
反应条件
bis-triphenylphosphine-palladium(II) chloride in tetrahydrofuran 20 h; Heating;
参考文献
Kamal, Marwan R.; Al-Taweel, Samir A.; El-Abadelah, Mustafa M.; Ajaj, Khalid M. Abu
Phosphorus, Sulfur and Silicon and the Related Elements, 1997 , vol. 126, p. 65 - 74
反应条件
copper; acetic acid T=75°C; 3 h;
参考文献
Boga, Carla; Calvaresi, Matteo; Franchi, Paola; Lucarini, Marco; Fazzini, Silvia; Spinelli, Domenico; Tonelli, Domenica
Organic and Biomolecular Chemistry, 2012 , vol. 10, # 39 p. 7986 - 7995
反应条件
1: With hydrogenchloride; tin in water T=0 - 20°C; 12 h; 2: With potassium hydroxide in water pH=7 - 8;
参考文献
Wen, Li; Nietfeld, Jon P.; Amb, Chad M.; Rasmussen, Seth C.
Journal of Organic Chemistry, 2008 , vol. 73, # 21 p. 8529 - 8536
反应条件
hydrogenchloride; tin in water T=0°C;
参考文献
Kuraray Co., Ltd.; Kondou, Yoshirou; Nakano, Kirihiro; Otake, Tomiaki
Patent: US8519150 B2, 2013 ;
Location in patent: Page/Page column 33 ;