4,4-二异氰酸酯二环己基甲烷合成路线 （共 15 条）
反应条件
1,2-dimethyl-3-ethylimidazole nitrate T=200 - 240°C; P=48.7549 Torr; 1.66667 h;
参考文献
LANZHOU INSTITUTE OF CHEMICAL PHYSICS, CHINESE ACADEMY OF SCIENCES
Patent: US2011/21810 A1, 2011 ;
Location in patent: Page/Page column 6 ;
反应条件
1: in butan-1-ol T=135°C; P=760.051 Torr; 8 h; 2: With butan-1-ol T=190 - 220°C; P=8250.83 - 10501.1 Torr; 10.5 h; 3: With tin(ll) chloride T=235 - 237°C; P=6.75068 - 7.50075 Torr; Product distribution / selectivity;
参考文献
DEGUSSA AG
Patent: US2005/250960 A1, 2005 ;
Location in patent: Page/Page column 7-8 ;
反应条件
zinc oxide; 1-(n-butyl)-3-methylimidazolium triflate T=200 - 240°C; P=48.7549 Torr; 1.66667 h;
参考文献
LANZHOU INSTITUTE OF CHEMICAL PHYSICS, CHINESE ACADEMY OF SCIENCES
Patent: US2011/21810 A1, 2011 ;
Location in patent: Page/Page column 6 ;
反应条件
1-ethyl-2,3-dimethylimidazolium hexafluorophosphate T=190 - 240°C; P=48.7549 Torr; 1.66667 h;
参考文献
LANZHOU INSTITUTE OF CHEMICAL PHYSICS, CHINESE ACADEMY OF SCIENCES
Patent: US2011/21810 A1, 2011 ;
Location in patent: Page/Page column 6 ;
反应条件
tin(ll) chloride T=140 - 236°C; P=7.50075 Torr; 8.5 h;
参考文献
DEGUSSA AG
Patent: US2005/43561 A1, 2005 ;
Location in patent: Page/Page column 5-7 ;
反应条件
T=360°C; P=300.03 Torr; Gas phase; Product distribution / selectivity;
参考文献
Ding, Jiansheng; Shang, Yong hua; Ma, Deqiang; Hao, Jingquan; Luo, Peicheng; Hu, Shuang
Patent: US2010/137634 A1, 2010 ;
Location in patent: Page/Page column 3 ;
反应条件
T=170 - 220°C; P=3.75038 - 757.576 Torr; 240 h; Product distribution / selectivity;
参考文献
Shinohata, Masaaki; Miyake, Nobuhisa
Patent: US2011/54211 A1, 2011 ;
Location in patent: Page/Page column 36 ;
反应条件
tin(ll) chloride T=230°C; P=7.50075 Torr;
参考文献
DEGUSSA AG
Patent: US2004/97752 A1, 2004 ;
Location in patent: Page 10 ;
反应条件
T=260°C; P=9.75098 Torr; Industry scale;
参考文献
Asahi Kasei Chemicals Corporation
Patent: EP2322504 A1, 2011 ;
Location in patent: Page/Page column 132; 145 ;
反应条件
T=240°C; P=6.0006 Torr; Industry scale;
参考文献
Asahi Kasei Chemicals Corporation
Patent: EP2322504 A1, 2011 ;
Location in patent: Page/Page column 146-147; 154 ;
