2,6-二溴-4,4-二辛基环戊并[2,1-b:3,4-b’]二噻吩合成路线 （共 9 条）
反应条件
N-bromosuccinmide in N,N-dimethyl-formamide
T=20°C;
参考文献
Coppo, Paolo; Cupertino, Domenico C.; Yeates, Stephen G.; Turner, Michael L.
Journal of Materials Chemistry, 2002 , vol. 12, # 9 p. 2597 - 2599
反应条件
1: 85 percent / potassium hydroxide; potassium iodide / dimethylsulfoxide / 20 °C
2: N-bromosuccinimide / dimethylformamide / 20 °C
View Scheme
参考文献
Coppo, Paolo; Cupertino, Domenico C.; Yeates, Stephen G.; Turner, Michael L.
Macromolecules, 2003 , vol. 36, # 8 p. 2705 - 2711
反应条件
1: 65 percent / potassium hydroxide; hydrazine hydrate / ethane-1,2-diol / 8 h / 180 °C
2: 85 percent / potassium hydroxide; potassium iodide / dimethylsulfoxide / 20 °C
3: N-bromosuccinimide / dimethylformamide / 20 °C
View Scheme
参考文献
Coppo, Paolo; Cupertino, Domenico C.; Yeates, Stephen G.; Turner, Michael L.
Macromolecules, 2003 , vol. 36, # 8 p. 2705 - 2711
反应条件
1: 80 percent / BuLi
2: 93 percent / N-bromosuccinimide / dimethylformamide / 20 °C
View Scheme
参考文献
Coppo, Paolo; Cupertino, Domenico C.; Yeates, Stephen G.; Turner, Michael L.
Journal of Materials Chemistry, 2002 , vol. 12, # 9 p. 2597 - 2599
反应条件
1.1: diethyl ether / 0 °C / Inert atmosphere; Reflux
1.2: 0 - 20 °C
2.1: n-butyllithium / hexane; diethyl ether / 2.25 h / -78 °C / Inert atmosphere
2.2: -78 - 20 °C
3.1: sulfuric acid / octane / 12 h / 20 °C
4.1: N-bromosuccinmide / N,N-dimethyl-formamide / 48 h / Darkness
View Scheme
参考文献
IMEC; Universiteit Hasselt
Patent: EP2397475 A1, 2011 ;
反应条件
1.1: n-butyllithium / hexane; diethyl ether / 2.25 h / -78 °C / Inert atmosphere
1.2: -78 - 20 °C
2.1: sulfuric acid / octane / 12 h / 20 °C
3.1: N-bromosuccinmide / N,N-dimethyl-formamide / 48 h / Darkness
View Scheme
参考文献
IMEC; Universiteit Hasselt
Patent: EP2397475 A1, 2011 ;
反应条件
1.1: n-butyllithium / hexane; diethyl ether / 2.25 h / -78 °C / Inert atmosphere
1.2: -78 - 20 °C
2.1: sulfuric acid / octane / 12 h / 20 °C
3.1: N-bromosuccinmide / N,N-dimethyl-formamide / 48 h / Darkness
View Scheme
参考文献
IMEC; Universiteit Hasselt
Patent: EP2397475 A1, 2011 ;
反应条件
1: sulfuric acid / octane / 12 h / 20 °C
2: N-bromosuccinmide / N,N-dimethyl-formamide / 48 h / Darkness
View Scheme
参考文献
IMEC; Universiteit Hasselt
Patent: EP2397475 A1, 2011 ;
反应条件
1.1: diethyl ether / 0 °C / Inert atmosphere; Reflux
1.2: 0 - 20 °C
2.1: n-butyllithium / hexane; diethyl ether / 2.25 h / -78 °C / Inert atmosphere
2.2: -78 - 20 °C
3.1: sulfuric acid / octane / 12 h / 20 °C
4.1: N-bromosuccinmide / N,N-dimethyl-formamide / 48 h / Darkness
View Scheme
参考文献
IMEC; Universiteit Hasselt
Patent: EP2397475 A1, 2011 ;
