1,1,1,3,3-五氟丙烷合成路线 （共 90 条）
反应条件
hydrogen fluoride; SbF5 T=120 - 121°C; P=9551.8 - 29721.1 Torr; 3.5 h; Product distribution / selectivity;
参考文献
Honeywell International Inc.
Patent: US2007/118003 A1, 2007 ;
Location in patent: Page/Page column 4-5 ;
反应条件
oxygen; chlorine T=23.9°C; P=700 Torr; Irradiation; Rate constant;
参考文献
Chen, Junyi; Young, Valerie; Niki, Hiromi; Magid, Hillel
Journal of Physical Chemistry A, 1997 , vol. 101, # 14 p. 2648 - 2653
反应条件
n-BuLi in diethyl ether under N2 atm. soln. CF3CH2CF2H in Et2O at -10°C was treated with n-BuLi, after 10 min Bu3SnCl in Et2O was added and stirred at 0°Covernight and warmed to room temp.; hexane was added, soln. was filtered, concd. in vacuo, and distilled at 113°C/15 mmHg; elem. anal.;
参考文献
Brisdon, Alan K.; Crossley, Ian R.; Pritchard, Robin G.; Sadiq, Ghazala; Warren, John E.
Organometallics, 2003 , vol. 22, # 26 p. 5534 - 5542
反应条件
hydrogen fluoride; 5percentTi/C T=300°C; Gas phase; Product distribution / selectivity;
参考文献
ARKEMA INC.
Patent: WO2009/3157 A1, 2008 ;
Location in patent: Page/Page column 15-16 ;
反应条件
chlorine T=20°C; 0.00166667 h; Irradiation;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 14 ;
反应条件
chlorine T=20°C; 0.00305556 - 0.00472222 h; Irradiation; Product distribution / selectivity;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 13 ;
反应条件
hydrogenchloride; Cr/C T=280°C; 2 h; Inert atmosphere; Product distribution / selectivity;
参考文献
EP2327680 A1, ;
Page/Page column 7-9 ;
反应条件
hydrogenchloride; fluorinated alumina T=310°C; 2 h; Inert atmosphere; Product distribution / selectivity;
参考文献
EP2327680 A1, ;
Page/Page column 6-9 ;
反应条件
hydrogenchloride; fluorinated alumina T=310°C; 2 h; Inert atmosphere; Product distribution / selectivity;
参考文献
EP2327680 A1, ;
Page/Page column 7-9 ;
反应条件
chlorine; carbon T=325°C;
参考文献
Iikubo, Yuichi; Hedrick, Vicki; Brandstadter, Stephen M.; Cohn, Mitchel
Patent: US2004/127757 A1, 2004 ;
Location in patent: Page 5 ;
