1,1,1,3,3-五氟丙烷合成路线 （共 90 条）
反应条件
chlorine T=20°C; 0.00472222 h; Irradiation;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 13 ;
反应条件
chlorine T=20°C; 0.00305556 - 0.00472222 h; Irradiation; Product distribution / selectivity;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 13 ;
反应条件
oxygen; chlorine T=23.9°C; P=700 Torr; Irradiation; Rate constant;
参考文献
Journal of Physical Chemistry A, , vol. 101, # 14 p. 2648 - 2653
反应条件
spherical (8 mesh) three dimensional marix porous carbonaceous material T=200 - 350°C; dehydrofluorination; Product distribution / selectivity;
参考文献
Honeywell international Inc.
Patent: US2008/51610 A1, 2008 ;
Location in patent: Page/Page column 4-5 ;
反应条件
carbon T=495 - 565°C; P=889.341 - 1034.15 Torr; Gas phase; Product distribution / selectivity;
参考文献
HONEYWELL INTERNATIONAL INC.
Patent: WO2007/56149 A1, 2007 ;
Location in patent: Page/Page column 13-16 ;
反应条件
fluorinated Cr2O3 T=250 - 280°C; P=1028.98 Torr; 20.7 h; Monel tube reactor;
参考文献
HONEYWELL INTERNATIONAL INC.
Patent: US2010/185027 A1, 2010 ;
Location in patent: Page/Page column 3-4 ;
反应条件
hydrogen fluoride; 5percentTi/C T=300°C; Gas phase; Product distribution / selectivity;
参考文献
ARKEMA INC.
Patent: WO2009/3157 A1, 2008 ;
Location in patent: Page/Page column 15-16 ;
反应条件
fluorinated Cr2O3 T=100°C; P=760.051 Torr; Product distribution / selectivity;
参考文献
Wang, Haiyou; Merkel, Daniel C.; Pokrovski, Konstantin A.; Tung, Hsueh Sung; Shankland, Ian
Patent: US2012/271070 A1, 2012 ;
Location in patent: Page/Page column 8 ;
反应条件
hydrogenchloride; fluorinated alumina T=310°C; 2 h; Inert atmosphere; Product distribution / selectivity;
参考文献
Central Glass Company, Limited
Patent: EP2327680 A1, 2011 ;
Location in patent: Page/Page column 6-9 ;
反应条件
hydrogenchloride; fluorinated alumina T=310°C; 2 h; Inert atmosphere; Product distribution / selectivity;
参考文献
Central Glass Company, Limited
Patent: EP2327680 A1, 2011 ;
Location in patent: Page/Page column 7-9 ;
