4-氟-3-硝基苯甲酸甲酯合成路线 （共 36 条）
反应条件
1.1: N-ethyl-N,N-diisopropylamine / N,N-dimethyl-formamide / 35 °C 2.1: hydrogen / palladium 10 on activated carbon / methanol / 30 °C 3.1: trichlorophosphate; N,N-dimethyl-aniline / 100 °C / Neat (no solvent) 3.2: pH 7 View Scheme
参考文献
BIOENERGENIX
Patent: US2012/225863 A1, 2012 ;
US 20120225863 A1
反应条件
1: K2CO3 / dimethylformamide / 6 h / 20 °C 2: H2 / 10 percent Pd/C / methanol; dioxane / 20 °C / 2280 Torr View Scheme
参考文献
Hiramatsu, Yasuyuki; Tsukida, Takahiro; Nakai, Yoshiyuki; Inoue, Yoshimasa; Kondo, Hirosato
Journal of Medicinal Chemistry, 2000 , vol. 43, # 8 p. 1476 - 1483
反应条件
potassium carbonate in N,N-dimethyl-formamide T=20°C; Etherification; 6 h;
参考文献
Hiramatsu, Yasuyuki; Tsukida, Takahiro; Nakai, Yoshiyuki; Inoue, Yoshimasa; Kondo, Hirosato
Journal of Medicinal Chemistry, 2000 , vol. 43, # 8 p. 1476 - 1483
反应条件
in tetrahydrofuran T=0 - 20°C;
参考文献
TEIJIN LIMITED
Patent: EP1502916 A1, 2005 ;
Location in patent: Page 440 ;
EP 1502916 A1
反应条件
1: N-ethyl-N,N-diisopropylamine / tetrahydrofuran / 17 h / Reflux 2: SnCl2·2H2O / ethyl acetate / 2 h / Reflux View Scheme
参考文献
Shionogi and Co., Ltd.; KAI, Hiroyuki; ENDOH, Takeshi; JIKIHARA, Sae; ASAHI, Kentaro; HORIGUCHI, Tohru
Patent: EP2604260 A1, 2013 ;
反应条件
1: acetonitrile / 20 °C 2: zinc; ammonium formate / acetonitrile / 20 °C View Scheme
参考文献
RSC Advances, , vol. 3, # 33 p. 13934 - 13943
反应条件
1: acetonitrile / 20 °C
2: zinc; ammonium formate / acetonitrile / 20 °C
View Scheme
参考文献
Chen, Li-Hsun; Chuang, Ying-Sheng; Narhe, Bharat D.; Sun, Chung-Ming
RSC Advances, 2013 , vol. 3, # 33 p. 13934 - 13943
反应条件
potassium carbonate in N,N-dimethyl-formamide
T=100°C; 1 h;
参考文献
PFIZER ITALIA S.R.L.
Patent: WO2007/99171 A2, 2007 ;
Location in patent: Page/Page column 50 ;
WO 2007/099171 A2
反应条件
anschliessende Hydrierung an Platin und nachfolgendes Erwaermen;
参考文献
Holley; Holley
Journal of the American Chemical Society, 1952 , vol. 74, p. 1110
反应条件
in N,N-dimethyl-formamide
T=0°C;
参考文献
PHARMACOPEIA DRUG DISCOVERY, INC.
Patent: WO2007/2742 A1, 2007 ;
Location in patent: Page/Page column 33 ;
WO 2007/002742 A1
