in toluene (under dry N2 ); a suspn. of Me3SnF and of (C5Me5)TiCl3 in toluene is stirred at 80°C for 4 h; solvent is removed in vac., residue is sublimed at 130°C/0,01 mbar, elem. anal.;

in water absence of air; stoich. amts., stirring for 3 h; collection (filtration), drying overnight;

hydrogen fluoride in not given refluxing Ti-complex with excess HF for 15 min; pptn. on cooling, filtration, drying (vac.);

lithium tert-butylate in diethyl ether complex and lithium tert-butoxide dissolved in THF, stirred for 24 h atroom temp., solvent removed (vac.), extd. (petroleum ether), filtered (Ar), solvent removed (vac.), dissolved in ether, BF3*(C2H5)2O added slowly; ppt. washed with ether, dried (vac.), treated (MeOH), washed (ether), dried (vac.), sublimed at 120°C at 1E-6 Torr, recrystd. (hot toluene);

in dichloromethane under Ar atm. Cp2TiCl2 was added to soln. triorganotin fluoride in CH2Cl2 and stirred for 3 h at 35°C; solvent was evapd. in vacuo, residue was washed with cold pentane and dried in vacuo;

pyridine or aniline in not given

in chloroform byproducts: CuCl; (N2); Schlenk technique; mixt. of Ti complex and Cu complex in CHCl3 wasstirred for 3 h; dried (vac.); residue extd. (CHCl3); filtered; filtrate dried (vac.); elem. anal.;

in tetrahydrofuran under N2; suspn. of Pd compd. in MeCN is added to a soln. of the Ti complex in THF, mixt. is stirred at room temp. overnight; solvent is removed, residue is washed with C6H6 and dried in vac., recrystd. from MeCN and benzene, solvent is removed from the benzene washings, the residue is washed with MeOH and identified as Cp2TiF2 by NMR; elem. anal.;

in acetone byproducts: silver bromide; addn. of AgBF4 soln. to Ti complex soln. (acetone), stirring (15 min); filtration, washing (acetone), addn. of Et2O to filtrate, cooling (-25°C), filtration, drying (vac.);

in acetone byproducts: silver chloride; addn. of AgBF4 soln. to Ti complex soln. (acetone), stirring (15 min); filtration, washing (acetone), addn. of Et2O to filtrate, cooling (-25°C), filtration, drying (vac.);