in ethylene glycol dimethyl ether Electrolysis; (N2); potential controlled electrolysis at -1,5 V (vs. AgI/Ag referenceelectrode) of soln. of Ge compd. at room temp.; filtered soln. was evapd. in vac., residue was extd. with ether and solvent removed, residue was sepd. by TLC, products were identified by m. p., IR, NMR and MAS;

in tetrahydrofuran; N,N,N',N',N'',N''-hexamethylphosphoric triamide (Ar); soln. of SmI2 (2 equiv.) in THF was added to soln. of MePh2GeBr inhexamethylphosphoric triamide; mixt. was stirred at room temp. for 1 h; chromd. (silica gel, ether); evapd.; chromd. (silica gel, hexane);

in ethylene glycol dimethyl ether Electrolysis; (N2); potential controlled electrolysis at -1,5 V (vs. AgI/Ag referenceelectrode) of soln. of Ge compd. at room temp.; filtered soln. was evapd. in vac., residue was extd. with ether and solvent removed, residue was sepd. by TLC, products were identified by m. p., IR, NMR and MAS;

in ethylene glycol dimethyl ether Electrolysis; (N2); potential controlled electrolysis at -1,5 V (vs. AgI/Ag referenceelectrode) of soln. of Ge compd. at room temp.; filtered soln. was evapd. in vac., residue was extd. with ether and solvent removed, residue was sepd. by TLC, products were identified by m. p., IR, NMR and MAS;