1-氯-3,3,3-三氟丙烯合成路线 （共 42 条）
反应条件
SbCl5 on Carbon; hydrogen fluoride T=85°C; 0.000555556 - 0.00277778 h;
参考文献
HONEYWELL INTERNATIONAL INC.; Nair, Haridasan K.; Singh, Rajiv Ratna; Poss, Andrew Joseph; Nalewajek, David
Patent: US2013/211156 A1, 2013 ;
Location in patent: Paragraph 0026 ;
反应条件
fluorinated Cr2O3 T=250°C; P=760.051 Torr; Product distribution / selectivity;
参考文献
Wang, Haiyou; Merkel, Daniel C.; Pokrovski, Konstantin A.; Tung, Hsueh Sung; Shankland, Ian
Patent: US2012/271070 A1, 2012 ;
Location in patent: Page/Page column 6-7 ;
反应条件
fluorinated Cr2O3 T=350°C; Product distribution / selectivity;
参考文献
Honeywell International Inc.
Patent: US2009/270661 A1, 2009 ;
Location in patent: Page/Page column 2 ;
反应条件
hydrogen fluoride; chlorine T=140°C; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0104; 0105 ;
反应条件
hydrogen fluoride T=325°C; Inert atmosphere; Temperature;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0106; 0107 ;
反应条件
hydrogen fluoride; chlorine T=140°C; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0104; 0105 ;
反应条件
hydrogen fluoride; chlorine T=300°C; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0104; 0105 ;
反应条件
10 wt FeCl3/carbon T=350°C; Product distribution / selectivity;
参考文献
Merkel, Daniel C.; Wang, Haiyou; Pokrovski, Konstantin A.; Tung, Hsueh Sung; Shankland, Ian
Patent: US2012/184786 A1, 2012 ;
Location in patent: Page/Page column 6 ;
反应条件
hydrogen fluoride; catalyst (fluorine content: about 16.4 wt.percent) obtained by fluorinating a chromium oxide represented by the composition formula CrO2.0 T=281°C; P=750.075 Torr; 2 h; Inert atmosphere; Product distribution / selectivity;
参考文献
DAIKIN INDUSTRIES, LTD.; NOSE, Masatoshi; YAMASHITA, Tsuneo; SUGIYAMA, Akinari
Patent: WO2010/101198 A1, 2010 ;
Location in patent: Page/Page column 15-16 ;
反应条件
hydrogen fluoride; chlorine T=350°C; Inert atmosphere; Temperature;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0104; 0105 ;
