1,2-二(三氯甲硅基)乙烷合成路线 （共 37 条）
反应条件
trichlorosilane; Pt(NH3)4Cl2; silica gel in various solvent(s) T=150°C; P=712.557 Torr;
参考文献
Okamoto, Masaki; Kiya, Hironari; Yamashita, Hiromi; Suzuki, Eiichi
Chemical Communications, 2002 , # 15 p. 1634 - 1635
反应条件
in neat (no solvent) HSiCl3 and (CH2CH)SiCl3 at 70-100°C under pressure;;
参考文献
Gmelin Handbook: Si: MVol.C, 63, page 177 - 179
反应条件
trichlorosilane; tetra-n-butyl phosphonium chloride
参考文献
Korea Institute of Science and Technology
Patent: US6392077 B1, 2002 ;
参考文献
Schmidbaur, Hubert; Doerzbach, Cornelia
Zeitschrift fuer Naturforschung, B: Chemical Sciences, 1987 , vol. 42, # 9 p. 1088 - 1096
反应条件
trichlorosilane; (benzyl)-triphenylphosphonium chloride T=180°C; 4 h; Product distribution / selectivity;
参考文献
US2011/105777 A1, ;
Page/Page column 3-4 ;
反应条件
tetracarbonylbis(μ-chloro)dirhodium(I); trichlorosilane
参考文献
Voronkov, M. G.; Pukhnarevich, V. B.; Tsykhanskaya, I. I.; Varshavskii, Yu. S.
Doklady Chemistry, 1980 , vol. 254, p. 449 - 451
Dokl. Akad. Nauk SSSR Ser. Khim., 1980 , vol. 254, # 4 p. 887 - 890
反应条件
trichlorosilane; tributylphosphine
反应条件
in neat (no solvent) heating of HSiCl3 and C2H2 in presence of dibenzoyl peroxide at 80-95°C in an autoclav for 24 h;;
参考文献
Journal of the American Chemical Society, , vol. 69, p. 2687 - 2689
US2510642 , ;
C. A., , p. 9473
反应条件
Si2Cl6 T=550°C; 0.00833333 h;
参考文献
Chernyshev; Komalenkova; Kapitova; Bykovchenko
Russian Journal of General Chemistry, 1996 , vol. 66, # 7 p. 1113 - 1116
反应条件
chlorine; copper in neat (no solvent) Si-Cu and a mixt. of C2H5Cl and Cl2;;
参考文献
J. Inst. Polytechn. Osaka Univ. C, , vol. 3, p. 65 - 76
C. A., , p. 9907
