1,1,1,3,3-五氯-丙烷合成路线 （共 81 条）
反应条件
T=185°C; mit UV-Licht.Irradiation;
参考文献
Ponomarenko; Snegowa
Zhurnal Obshchei Khimii, 1957 , vol. 27, p. 2067,2070; engl. Ausg. S. 2122, 2125
反应条件
hydrogen fluoride; antimony(V) pentachloride T=65 - 70°C; Product distribution / selectivity;
参考文献
US2006/58560 A1, ;
Page/Page column 3 ;
反应条件
hydrogen fluoride; antimony(V) pentachloride T=-20 - 135°C; P=16274.9 - 21446.5 Torr; Autoclave;
参考文献
Wang, Haiyou; Merkel, Daniel C.; Pokrovski, Konstantin A.; Tung, Hsueh Sung; Shankland, Ian
Patent: US2012/271070 A1, 2012 ;
Location in patent: Page/Page column 6 ;
反应条件
hydrogen fluoride; antimony(V) pentachloride T=120°C; P=18751.9 Torr; 21 h;
参考文献
Wilmet, Vincent; Janssens, Francine; Schoebrechts, Jean-Paul
Patent: US2004/19244 A1, 2004 ;
Location in patent: Page 3 ;
反应条件
1: With hydrogen fluoride; titanium tetrachloride T=20 - 120°C; P=18617.8 Torr; 1.16667 h; 2: With potassium hydroxide in water
参考文献
Honeywell International Business Machines
Patent: US6844475 B1, 2005 ;
Location in patent: Page column 3 ;
反应条件
hydrogen fluoride; chlorine; antimony(V) pentachloride T=80 - 95°C; P=8517.48 - 10069 Torr;
参考文献
Honeywell International, Inc.
Patent: US2005/90698 A1, 2005 ;
Location in patent: Page/Page column 5 ;
反应条件
hydrogen fluoride; SbF5 T=120 - 121°C; P=9551.8 - 29721.1 Torr; 3.5 h; Product distribution / selectivity;
参考文献
HONEYWELL INTERNATIONAL INC.; Nair, Haridasan K.; Singh, Rajiv Ratna; Poss, Andrew Joseph; Nalewajek, David
Patent: US2013/211156 A1, 2013 ;
Location in patent: Paragraph 0033; 0034 ;
反应条件
hydrogen fluoride; chlorine; antimony(V) pentachloride T=95°C; Continous process;
参考文献
HONEYWELL INTERNATIONAL INC.
Patent: WO2004/99109 A1, 2004 ;
Location in patent: Page 8 ;
反应条件
hydrogen fluoride; Catalyst M-Chromium oxide T=300°C;
参考文献
Honeywell International, Inc.
Patent: US2005/90698 A1, 2005 ;
Location in patent: Page/Page column 5 ;
反应条件
hydrogen fluoride; fluorinated Cr2O3 T=310°C; P=2052.96 Torr; Industry scale; Product distribution / selectivity;
参考文献
HONEYWELL INTERNATIONAL INC.
Patent: US2011/201853 A1, 2011 ;
Location in patent: Page/Page column 15 ;
