3-甲基-2-氧代丁酰乙酯合成路线 （共 59 条）
反应条件
in tetrahydrofuran; diethyl ether T=-60°C;
参考文献
Rambaud, M.; Bakasse, M.; Duguay, G.; Villieras, J.
Synthesis, 1988 , # 7 p. 564 - 566
反应条件
mercury(II) diacetate in water; acetone T=20°C; Hydrolysis; 1 h;
参考文献
Lebarillier, Loic; Outurquin, Francis; Paulmier, Claude
Tetrahedron, 2000 , vol. 56, # 38 p. 7495 - 7502
反应条件
hydrogenchloride in diethyl ether
参考文献
US6403561 B1, ;
US 6403561 B1
反应条件
trans-tungsten(VI) oxotetrachloride in acetonitrile 72 h; Ambient temperature;
参考文献
Yu; Schwartz
Tetrahedron Letters, 1992 , vol. 33, # 45 p. 6791 - 6794
反应条件
durch Umlagerung bei der Einw. von Organozinkverbindungen;
参考文献
Comptes Rendus Hebdomadaires des Seances de l'Academie des Sciences, , vol. 152, p. 445
反应条件
magnesium bromide in dichloromethane; water Ambient temperatureelectrolysis with Pt/Pt, 3 F/mol;
参考文献
Torii, Sigeru; Tanaka, Hideo; Hamano, Sin-ichi; Tada, Nobuhito; Nokami, Junzo; Sasaoka, Michio
Chemistry Letters, 1984 , p. 1823 - 1826
反应条件
1: benzene / 72 h / Heating 2: H2 / 5percent palladium on charcoal / ethanol / 16 h / Ambient temperature 3: tert-butyl hypochlorite / diethyl ether / 0.5 h / 0 °C 4: sodium ethoxide / ethanol / 1 h / 40 °C 5: 5percent sulfuric acid / H2O / 2 h / Ambient temperature View Scheme
参考文献
Chemical and Pharmaceutical Bulletin, , vol. 31, # 3 p. 887 - 894
反应条件
in diethyl ether T=-90°C; 1 h;
参考文献
Heterocycles, , vol. 49, # 1 p. 459 - 464
反应条件
1: H2 / 5percent palladium on charcoal / ethanol / 16 h / Ambient temperature 2: tert-butyl hypochlorite / diethyl ether / 0.5 h / 0 °C 3: sodium ethoxide / ethanol / 1 h / 40 °C 4: 5percent sulfuric acid / H2O / 2 h / Ambient temperature View Scheme
参考文献
Chemical and Pharmaceutical Bulletin, , vol. 31, # 3 p. 887 - 894
反应条件
1: H2 / 5percent palladium on charcoal / ethanol / 16 h / Ambient temperature 2: tert-butyl hypochlorite / diethyl ether / 0.5 h / 0 °C 3: sodium ethoxide / ethanol / 1 h / 40 °C 4: 5percent sulfuric acid / H2O / 2 h / Ambient temperature View Scheme
参考文献
Chemical and Pharmaceutical Bulletin, , vol. 31, # 3 p. 887 - 894
