3,3'-双(三氟甲基)苯甲酮合成路线 （共 12 条）
反应条件
hydrogenchloride; n-butyllithium; sodium hydrogencarbonate in hexane; water
反应条件
tetrakis(triphenylphosphine) palladium(0) in tetrahydrofuran T=60°C; 4 h;
参考文献
Rao, Maddali L. N.; Venkatesh, Varadhachari; Dasgupta, Priyabrata
Tetrahedron Letters, 2010 , vol. 51, # 38 p. 4975 - 4980
反应条件
tetrakis(triphenylphosphine) palladium(0) in 1,4-dioxane T=80°C; 4 h; Inert atmosphere;
参考文献
Rao, Maddali L. N.; Venkatesh, Varadhachari; Dasgupta, Priyabrata
Tetrahedron Letters, 2010 , vol. 51, # 38 p. 4975 - 4980
反应条件
oxalyl dichloride; dimethyl sulfoxide; triethylamine in dichloromethane T=20°C; Swern oxidation; 1 h;
参考文献
Mills, Nancy S.; Tirla, Cornelia; Benish, Michele A.; Rakowitz, Amber J.; Bebell, Lisa M.; Hurd, Caroline M. M.; Bria, Anna L. M.
Journal of Organic Chemistry, 2005 , vol. 70, # 26 p. 10709 - 10716
反应条件
1: With lead; tetrabutylammomium bromide in dichloromethane T=30 - 40°C; Sonication; 2: With water; silica gel regioselective reaction;
参考文献
Novikov; Khlebnikov; Khistyaev; Magull
Russian Chemical Bulletin, 2008 , vol. 57, # 5 p. 1070 - 1079
反应条件
in diethyl ether a) RT, 30 min, b) reflux, 30 min;
参考文献
Prakash, G. K. Surya; York, Chentao; Liao, Qimu; Kotian, Kirtivan; Olah, George A.
Heterocycles, 1995 , vol. 40, # 1 p. 79 - 84
反应条件
1.1: n-butyllithium / diethyl ether / 1 h / -78 °C 1.2: diethyl ether / 2.5 h / 20 °C 2.1: 0.61 g / oxalyl chloride; DMSO; triethylamine / CH2Cl2 / 1 h / 20 °C View Scheme
参考文献
Journal of Organic Chemistry, , vol. 70, # 26 p. 10709 - 10716
反应条件
1.1: n-butyllithium / diethyl ether / 1 h / -78 °C 1.2: diethyl ether / 2.5 h / 20 °C 2.1: 0.61 g / oxalyl chloride; DMSO; triethylamine / CH2Cl2 / 1 h / 20 °C View Scheme
参考文献
Journal of Organic Chemistry, , vol. 70, # 26 p. 10709 - 10716
反应条件
(i) Mg, I2, Et2O, (ii) /BRN= 1900390/; Multistep reaction;
参考文献
Bulletin de la Societe Chimique de France, , p. 587 - 593
反应条件
1: With sodium tetrahydroborate in methanol T=20°C; 24 h; 2: With water in methanol
参考文献
Hitchcock, Stephen; Amegadzie, Albert; Qian, Wenyuan; Xia, Xiaoyang; Harried, Scott S.
Patent: US2008/4289 A1, 2008 ;
Location in patent: Page/Page column 32 ;
