in diethylene glycol dimethyl ether byproducts: H2; further intermediate: KSiH3; under N2, dispersion of potassium reacts with SiH4 at 100°C, concd. in vacuo at 30°C, C4F9SO3SiH3 added at -60°C, stored at this temp. for 10 min, warmed to 40°C; volatiles removed over 3 h in vacuo, SiH4 removed; GC;

in diethylene glycol dimethyl ether byproducts: H2; further intermediate: NaSiH3; under N2, dispersion of sodium reacts with SiH4 at 100°C, concd. in vacuo at 30°C, C4F9SO3SiH3 added at -60°C, stored at this temp. for 10 min, warmed to 40°C; volatiles removed over 3 h in vacuo, SiH4 removed; GC;

in gaseous matrix a bubbler used with H2 carrier (with flow of 3 l/min) to introduce neopentasilane to chamber, bubbler temp. 35 °C, chamber pressure 6 torr, growth temp. 600, 650, 700 °C;