反应条件
1: 99 percent / Et3N / tetrahydrofuran; H2O / 12 h / Ambient temperature 2: 99 percent / Et3N, DMAP / CH2Cl2 / 1.) 0 deg C, 1 h, 2.) r.t., 2 h View Scheme
参考文献
RANBAXY LABORATORIES LIMITED; SATTIGERI, Jitendra, A.; AHMED, Shahadat; SETHI, Sachin; GADHAVE, Anil, Gorakshnath; KAUR, Kirandeep; SHARMA, Lalima; JADHAV, Balasaheb, Gangadhar; DATTA, Dhrubajyoti; CHILLA, Satyanarayan, Murthy; BHATNAGER, Pradip, Kumar; RAY, Abhijit; BANSAL, Vinay; DAVIS, Joseph, Alexanand; RAYASAM, Geeta, Vani; TULASI, Vamshi, Krishna
Patent: WO2011/92671 A1, 2011 ;
WO 2011/092671 A1