2-环己基-2-羟基苯乙酸甲酯合成路线 (共 21 条)
反应条件
lithium diisopropyl amide
参考文献
Tetrahedron Letters, , vol. 39, # 20 p. 3327 - 3330
反应条件
diazomethane; potassium hydroxide; ethanol; dihydrogen peroxide; acetic anhydride Different molar ratio; Product distribution;
参考文献
Chemical and pharmaceutical bulletin, , vol. 36, # 5 p. 1926 - 1929
反应条件
sodium methylate in n-heptane T=65 - 100°C; Inert atmosphere;
参考文献
MATRIX LABORATORIES LIMITED
Patent: WO2009/122429 A2, 2009 ;
Location in patent: Page/Page column 6-7 ;
反应条件
1: With methanol; water; sodium hydroxide 2 h; Reflux; 2: With hydrogenchloride; water T=0°C; pH=3 - 4;
参考文献
AUSPEX PHARMACEUTICALS, INC.
Patent: US2009/247628 A1, 2009 ;
Location in patent: Page/Page column 53 ;
US 20090247628 A1
反应条件
1: With methanol; water; sodium hydroxide 2 h; Reflux; 2: With hydrogenchloride; water T=0°C; pH=3 - 4;
参考文献
AUSPEX PHARMACEUTICALS, INC.
Patent: US2009/247628 A1, 2009 ;
Location in patent: Page/Page column 53 ;
US 20090247628 A1
反应条件
1: KOH / ethanol / 20 °C 2: 94 percent / (NMe4)Co(III)Me2opba*2H2O*CH3CN; pivalaldehyde; O2 / acetonitrile / 3 h View Scheme
参考文献
Blay, Gonzalo; Fernandez, Isabel; Formentin, Pilar; Pedro, Jose R.; Rosello, Antonio L.; Ruiz, Rafael; Journaux, Yves
Tetrahedron Letters, 1998 , vol. 39, # 20 p. 3327 - 3330
反应条件
1: With methanol; water; sodium hydroxide 2 h; Reflux; 2: With hydrogenchloride; water T=0°C; pH=3 - 4;
参考文献
AUSPEX PHARMACEUTICALS, INC.
Patent: US2009/247628 A1, 2009 ;
Location in patent: Page/Page column 53 ;
US 20090247628 A1
反应条件
1: With methanol; water; sodium hydroxide 2 h; Reflux; 2: With hydrogenchloride; water T=0°C; pH=3 - 4;
参考文献
AUSPEX PHARMACEUTICALS, INC.
Patent: US2009/247628 A1, 2009 ;
Location in patent: Page/Page column 53 ;
US 20090247628 A1
反应条件
sodium methylate in n-heptane T=65 - 100°C; Inert atmosphere;
参考文献
MATRIX LABORATORIES LIMITED
Patent: WO2009/122429 A2, 2009 ;
Location in patent: Page/Page column 6-7 ;
反应条件
sodium methylate in n-heptane T=65 - 100°C; Inert atmosphere;
参考文献
MATRIX LABORATORIES LIMITED
Patent: WO2009/122429 A2, 2009 ;
Location in patent: Page/Page column 6-7 ;